WSD6060DN56 N-hongere 60V 65A DFN5X6-8 WINSOK MOSFET

whakaahuatanga poto:

Nama Wāhanga:WSD6060DN56

BVDSS:60V

ID:65A

RDSON:7.5mΩ

Channel:N-hongere

Mōkī:DFN5X6-8

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WINSOK MOSFET tirohanga hua

Ko te ngaohiko o WSD6060DN56 MOSFET he 60V, ko te 65A te waa, ko te parenga ko 7.5mΩ, ko te hongere ko N-channel, ko te kete ko DFN5X6-8.

WINSOK MOSFET waahi tono

MOSFET E-hikareti, MOSFET utu ahokore, motika MOSFET, motika MOSFET, mo te tiaki hauora MOSFET, mo nga motika motika MOSFET, mo nga kaiwhakahaere MOSFET, mo nga hua mamati MOSFET, mo nga taputapu whare iti MOSFET, MOSFET hikohiko kaihoko.

WINSOK MOSFET e rite ana ki etahi atu nama rauemi waitohu

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

Tawhā MOSFET

Tohu	Tawhā		Whakatauranga	Waeine
Whakatauranga noa
VDSS	Ngaohiko Putake-Riki		60	V
VGSS	Ngaohiko Puti-Putake		±20	V
T_J	Paemahana Hononga Morahi		150	°C
TSTG	Te Awhe Paawera Rokiroki		-55 ki te 150	°C
I_S	Diode Tonu Whakamua Naianei	T_c=25°C	30	A
ID	Wairere Tonu	T_c=25°C	65	A
ID	Wairere Tonu	T_c=70°C	42	A
I DM b	I Whakamatauria I Naianei	T_c=25°C	250	A
P_D	Morahi Te Tohanga Mana	T_c=25°C	62.5	W
P_D	Morahi Te Tohanga Mana	T_C=70°C	38	W
R_qJL	Ngaariki Atete-Tuhinga ki te Arataki	Te Tuturu	2.1	°C/W
RqJA	Ngaariki Atete-Tuhinga ki Ambient	t £ 10s	45	°C/W
RqJA	Ngaariki Atete-Tuhinga ki Ambient	Te Tuturu^b	50	°C/W
I AS^d	Avalanche Current, Takitahi patere	L=0.5mH	18	A
E AS d	Pungao Avalanche, Puti kotahi	L=0.5mH	81	mJ

Tohu	Tawhā	Nga Tikanga Whakamatau		Min.	Pato.	Max.	Waeine
Nga ahuatanga pateko
BV_DSS	Ngaohiko Pakaru-Putake	V_GS=0V, ahau_DS=250mA		60	-	-	V
IDSS	Ngaohiko Ngaohiko Ngaohiko Kore Naianei	V_DS=48V, V_GS=0V		-	-	1	mA
IDSS	Ngaohiko Ngaohiko Ngaohiko Kore Naianei						mA
			T_J=85°C	-	-	30
VGS(th)	Ngaohiko Paepae Keeti	V_DS=V_GS, ahau_DS=250mA		1.2	1.5	2.5	V
IGSS	Te Rirenga o te Keeti	V_GS=±20V, V_DS=0V		-	-	±100	nA
R DS(ON) 3	Waiwai-Source On-state Atete	V_GS=10V, I_DS=20A		-	7.5	10	m W
R DS(ON) 3	Waiwai-Source On-state Atete	V_GS=4.5V, I_DS=15 A		-	10	15	m W
Nga ahuatanga o te diode
V SD	Ngaohiko Whakamua Diode	I_SD=1A, V_GS=0V		-	0.75	1.2	V
t_rr	Wā Whakaora Whakamuri	I_SD=20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Whakamuri Utu Whakaora	I_SD=20A, dl_SD/dt=100A/µs		-	36	-	nC
Nga ahuatanga hihiri^3,4
R_G	Atete kuwaha	V_GS=0V,V_DS=0V,F=1MHz		-	1.5	-	W
C_kei	Te Puatanga Whakauru	V_GS=0V, V_DS=30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Putanga Putanga			-	270	-
C_rss	Whakamuri Whakawhiti Putanga			-	40	-
td(KĀ)	Wā Taarua Tahuri	VDD=30V, IDS=1A, VGEN=10V, RG=6Ω.		-	15	-	ns
t_r	Huri-i te Wa Whakatika			-	6	-
td( OTI)	Whakawetohia te Wa Taarua			-	33	-
t_f	Whakawetohia te Wa Hinga			-	30	-
Nga ahuatanga o te utu kuaha ^3,4
Q_g	Tapeke Utu Keeti	V_DS=30V, V_GS=4.5V, I_DS=20A		-	13	-	nC
Q_g	Tapeke Utu Keeti	V_DS=30V, V_GS=10V, I_DS=20A		-	27	-
Q_gth	Utu Utu Paepae			-	4.1	-
Q_gs	Utu-Putake Utu			-	5	-
Q_gd	Utu-Kuha Utu			-	4.2	-